An Oscillator Design Based on MOS-NDR Inverter

نویسندگان

  • Cher-Shiung Tsai
  • Chung-Chih Hsiao
  • Kwang-Jow Gan
  • Jia-Ming Wu
  • Ming-Yi Hsieh
  • Chun-Chieh Liao
  • Shih-Yu Wang
  • Feng-Chang Chiang
  • Chia-Hung Chen
  • Dong-Shong Liang
  • Yaw-Hwang Chen
چکیده

First, we create a MOS-NDR (negative differential resistance) cell and then put two MOS-NDR cells in cascode (totem-pole) structure. With MOBILE (monostable-bistable transition logic element) theorem we can built a MOS-NDR inverter by placing a NMOS in parallel with the lower part of the cascode structure. The MOS-NDR inverter cascades two Common-Source amplifier and feedback to MOS-NDR inverter. The circuit will start an oscillation. Such a phenomenon is similar to ring oscillator. The frequency of the MOS-NDR oscillator will be 116 MHz when voltage is 2.7 volts. Those MOS-NDR devices are adapted from CIC standard 0.35um CMOS process.

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تاریخ انتشار 2006